| CPC G11C 29/36 (2013.01) [G11C 29/1201 (2013.01); G11C 29/12015 (2013.01); G11C 29/4401 (2013.01); G11C 2029/3602 (2013.01)] | 17 Claims |
|
1. A test method comprising:
writing first data into a target memory cell;
performing reverse writing on the target memory cell;
reading second data stored in the target memory cell after the reverse writing;
determining whether the second data are the same as the first data; and
determining that write recovery time of the target memory cell fails when the second data are the same as the first data; and,
wherein after the determining that write recovery time of the target memory cell fails when the second data are the same as the first data, the test method further comprises:
detecting whether there is provided with an isolation layer between a bit line and a bit line contact hole structure of the target memory cell.
|