	US 12,112,814 B2
	Open block boundary group programming for non-volatile memory
Ke Zhang, Shanghai (CN); Ming Wang, Shanghai (CN); and Liang Li, Shanghai (CN)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jun. 10, 2022, as Appl. No. 17/837,345.
Prior Publication US 2023/0402109 A1, Dec. 14, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01)

CPC G11C 16/3459 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01)]

20 Claims

15. A non-volatile storage system comprising

a three-dimensional memory structure comprising blocks comprising vertically oriented NAND strings having memory cells, each block comprising a plurality of word lines; and

one or more control circuits in communication with the three-dimensional memory structure, wherein the one or more control circuits are configured to:

receive data from a host;

determine whether the data is sufficient to program an entire block of memory cells, wherein the block will be an open block if the data is insufficient to program the entire block; and

responsive to a determination that the block will be an open block, program the data into consecutive word lines in the open block including:

program units of the data into memory cells connected to non-boundary word lines in the open block with a first set of program parameters; and

program one or more units of the data into memory cells connected to a boundary word line in the open block with a second set of program parameters, wherein the boundary word line is adjacent to a word line having unprogrammed memory cells after programming the data from the host.