US 12,112,804 B2
Interleaved string drivers, string driver with narrow active region, and gated LDD string driver
Michael A. Smith, Boise, ID (US); and Martin W. Popp, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 23, 2023, as Appl. No. 18/237,070.
Application 18/237,070 is a division of application No. 17/401,239, filed on Aug. 12, 2021, granted, now 11,783,896.
Prior Publication US 2023/0395151 A1, Dec. 7, 2023
Int. Cl. G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01)
CPC G11C 16/08 (2013.01) [G11C 16/0483 (2013.01); H01L 29/1083 (2013.01); H01L 29/7833 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a plurality of memory strings, each memory string including a plurality of local word lines connected to corresponding memory cells to form a memory cell array; and
a plurality of word line drivers, each word line driver having at least one sub-driver that includes,
a first contact connected to a corresponding local word line,
a second contact,
a gate disposed between the first and second contacts, and
a channel region disposed under the gate and disposed between a first lightly dosed drain (LDD) region and a second LDD region,
wherein the gate extends over at least a portion of at least one of the first or second LDD regions to form a respective gated lightly dosed drain (GLDD) region adjacent the channel region.