| CPC G11C 16/08 (2013.01) [G11C 16/28 (2013.01)] | 20 Claims |
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1. A programming method for a memory device, wherein the memory device has a memory cell array that includes a first dummy word line set, a plurality of word lines and a second dummy word line set arranged in sequence, the programming method comprising:
grouping the plurality of word lines into a plurality of word line groups;
generating at least one pass bias set, the at least one pass bias set having a plurality of pass biases that are respectively corresponding to each of the plurality of word line groups;
selecting one of the plurality of word lines for programming, and determining that the selected word line belongs to a specific word line group of the plurality of word line groups; and
according to a programming sequence, applying a corresponding pass bias in the plurality of pass biases of the at least one pass bias set to at least one dummy word line in one of the first dummy word line set and the second dummy word line set, wherein the corresponding pass bias corresponds to the specific word line group.
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