a metal oxide layer pattern;

a ferromagnetic pattern directly contacting an upper surface of the metal oxide layer pattern, and the ferromagnetic pattern including a horizontal magnetic material;

a non-magnetic pattern directly contacting an upper surface of the ferromagnetic pattern, the non-magnetic pattern including a non-magnetic metal material;

a free layer pattern directly contacting a portion of an upper surface of the non-magnetic pattern, the free layer pattern having a magnetization direction perpendicular to the upper surface of the non-magnetic pattern, and the magnetization direction being changeable in response to spin currents generated in a stacked structure including the metal oxide layer pattern, the ferromagnetic pattern, and the non-magnetic pattern;

a tunnel barrier pattern on the free layer pattern; and

a pinned layer pattern on the tunnel barrier pattern, the pinned layer pattern having a magnetization direction in a vertical direction that is fixed;

wherein:

the spin currents are generated as an in-plane current is applied to the stacked structure including the metal oxide layer pattern, the ferromagnetic pattern, and the non-magnetic pattern, and

the spin currents include a spin current generated by a spin Hall effect, a first interface spin current generated at a first interface between the metal oxide layer pattern and the ferromagnetic pattern, and a second interface spin current generated at a second interface between the ferromagnetic pattern and the non-magnetic pattern.