| CPC G06F 30/33 (2020.01) [G06F 2111/10 (2020.01)] | 12 Claims |
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1. A method for wafer result prediction and root cause analysis, comprising:
before a failure occurs, executing a plasma etching process;
collecting first data of the plasma etching process:
determining predictor parameters of the plasma etching process using domain knowledge including knowledge of the plasma etching process, a plasma etching tool associated with the plasma etching process, a metrology tool, and/or the wafer;
removing collinearity among the predictor parameters to obtain key predictor parameters;
collecting metrology data of the wafer using the metrology tool, the metrology data related to the plasma etching process;
selecting a subset of the key predictor parameters based on the metrology data of the wafer;
building a virtual metrology (VM) model on the subset of the key predictor parameters; and
predicting wafer results of the plasma etching process using the VM model,
wherein determining the predictor parameters comprises determining a first subgroup of predictor parameters using domain knowledge, the first subgroup of predictor parameters expected to affect wafer results; and determining a second subgroup of predictor parameters based on Design of Experiments (DOE) and domain knowledge, the second subgroup of predictor parameters being a subset of the first subgroup of predictor parameters and known to affect wafer results,
after the failure occurs, executing the plasma etching process; and
collecting second data of the plasma etching process;
identifying a parameter associated with a root cause of the failure using the VM model, the first data and the second data;
fixing the failure by adjusting the parameter; and
executing the plasma etching process using the parameter adjusted.
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