	US 12,112,072 B2
	Method and memory device for atomic processing of fused commands
Chun-chu Chen-Jhy Archie Wu, San Carlos, CA (US); Daniel Lee Helmick, Broomfield, CO (US); Fnu Vikram Singh, Fremont, CA (US); Syed Kaiser, San Ramon, CA (US); Vasili Zhdankin, Prior Lake, MN (US); and Yong Yang, Milpitas, CA (US)
Assigned to Samsung Electronics Co., Ltd, (KR)
Filed by Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed on Aug. 28, 2023, as Appl. No. 18/456,770.
Application 18/456,770 is a continuation of application No. 17/381,795, filed on Jul. 21, 2021, granted, now 11,762,587.
Claims priority of provisional application 63/184,499, filed on May 5, 2021.
Prior Publication US 2023/0401009 A1, Dec. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G06F 12/02 (2006.01); G06F 13/16 (2006.01)

CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 13/1621 (2013.01); G06F 13/1626 (2013.01); G06F 13/1642 (2013.01)]

20 Claims

1. A method of a memory device, comprising:

retrieving, by a controller of the memory device, a first command from a host memory;

storing, by the controller, a first identifier of the first command in a set-aside buffer of the memory device;

retrieving, by the controller, a second command from the host memory; and

initiating, by the controller, processing of the first command and the second command based on a second identifier of the second command corresponding to the first identifier.