CPC G06F 3/0659 (2013.01) [G06F 1/06 (2013.01); G06F 3/0613 (2013.01); G06F 3/0679 (2013.01); G06F 13/1668 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01)] | 20 Claims |
1. A nonvolatile memory device comprising:
a memory interface circuit configured to:
receive, from a memory controller via first signal lines, a first control signal and a second control signal during a first cycle period and a second cycle period from among time periods included in a predetermined number of cycle periods,
receive a write enable signal from the memory controller via a second signal line,
obtain a command from the first control signal and the second control signal received during remaining cycle periods of the time periods based on a toggle timing of the write enable signal, when the first control signal and the second control signal received during the first and the second cycle periods are in a first state, and
obtain an address from the first control signal and the second control signal received during the remaining cycle periods based on a toggle timing of the write enable signal, when the first control signal and the second control signal received during the first and the second cycle periods are in a second state.
|