US 12,111,680 B2
Memory device including receiving circuit, electronic device, and received signal processing method of electronic device
Dae Hyun Kwon, Seoul (KR); Min-Hyeong Kim, Osan-si (KR); and Wang Soo Kim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 22, 2022, as Appl. No. 17/871,374.
Claims priority of application No. 10-2021-0152427 (KR), filed on Nov. 8, 2021; and application No. 10-2022-0014340 (KR), filed on Feb. 3, 2022.
Prior Publication US 2023/0140969 A1, May 11, 2023
Int. Cl. G06F 1/08 (2006.01); H04L 25/03 (2006.01)
CPC G06F 1/08 (2013.01) [H04L 25/03057 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a receiving circuit, the receiving circuit including:
a first path receiving a received signal, and outputting the received signal directly as a first corrected signal in a current clock signal;
a second path holding or tracking the received signal, and outputting a second corrected signal in the current clock signal,
wherein the second corrected signal is held in a previous clock signal;
a summing circuit summing the first corrected signal and the second corrected signal, and outputting a summed received signal; and
a decision feedback equalizer comparing the summed received signal with a reference signal to decide equalized data, and outputting the equalized data in the current clock signal.