	US 12,111,566 B2
	Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
Yohei Ikebe, Tokyo (JP); and Tsutomu Shoki, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Filed by HOYA CORPORATION, Tokyo (JP)
Filed on Oct. 9, 2023, as Appl. No. 18/483,453.
Application 18/483,453 is a continuation of application No. 17/990,049, filed on Nov. 18, 2022, granted, now 11,815,806.
Application 17/990,049 is a continuation of application No. 17/056,713, granted, now 11,531,264, issued on Dec. 20, 2022, previously published as PCT/JP2019/020632, filed on May 24, 2019.
Claims priority of application No. 2018-100362 (JP), filed on May 25, 2018; and application No. 2018-165247 (JP), filed on Sep. 4, 2018.
Prior Publication US 2024/0036457 A1, Feb. 1, 2024
Int. Cl. G03F 1/32 (2012.01); G03F 1/24 (2012.01); G03F 7/20 (2006.01)

CPC G03F 1/32 (2013.01) [G03F 1/24 (2013.01); G03F 7/2004 (2013.01)]

16 Claims

1. A reflective mask blank comprising:

a substrate;

a multilayer reflective film on the substrate; and

a phase shift film on the multilayer reflective film,

wherein

the phase shift film comprises ruthenium (Ru) and at least one selected from chromium (Cr), nickel (Ni), cobalt (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W) and rhenium (Re),

the phase difference of the phase shift film is 130 degrees to 160 degrees or 200 degrees to 230 degrees,

the refractive index n to EUV light is 0.860 to 0.950 and the extinction coefficient k to EUV light is 0.009 to 0.095 when the phase difference of the phase shift film is 130 degrees to 160 degrees, and

the refractive index n to EUV light is 0.860 to 0.940 and the extinction coefficient k to EUV light is 0.008 to 0.057 when the phase difference of the phase shift film is 200 degrees to 230 degrees.