US 12,111,552 B2
Array substrate, manufacturing method thereof, and panel
Haijun Wang, Shenzhen (CN); and Jiangbo Yao, Shenzhen (CN)
Assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen (CN)
Appl. No. 17/420,100
Filed by SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen (CN)
PCT Filed May 28, 2021, PCT No. PCT/CN2021/096974
§ 371(c)(1), (2) Date Jun. 30, 2021,
PCT Pub. No. WO2022/193439, PCT Pub. Date Sep. 22, 2022.
Claims priority of application No. 202110296422.8 (CN), filed on Mar. 19, 2021.
Prior Publication US 2023/0194943 A1, Jun. 22, 2023
Int. Cl. G02F 1/1368 (2006.01); G02F 1/1362 (2006.01)
CPC G02F 1/1368 (2013.01) [G02F 1/136218 (2021.01); G02F 1/136222 (2021.01)] 14 Claims
OG exemplary drawing
 
1. An array substrate, wherein the array substrate comprises a display area, the display area comprises at least one functional area, and the array substrate further comprises:
a base substrate;
a plurality of pixel units provided on the base substrate, wherein each of the pixel units includes a first driving thin film transistor;
at least one sensing unit configured for environment sensing, wherein the sensing unit is disposed on a part of the base substrate corresponding to the functional area, each of the at least one sensing unit includes a second driving thin film transistor, a functional thin film transistor, a switching thin film transistor, and a storage capacitor, the storage capacitor is configured to receive and store the electrical signal, and the switching thin film transistor is configured to control a transmission of the electrical signal stored in the storage capacitor to a processor;
a planarization layer disposed on the base substrate and covering the at least one sensing unit and the pixel units; and
a plurality of pixel electrodes disposed on a side of the planarization layer away from the base substrate,
wherein the first driving thin film transistor is connected to a first pixel electrode of the pixel electrodes, the second driving thin film transistor is connected to a second pixel electrode of the pixel electrodes that is different from the first pixel electrode, the functional thin film transistor is configured for sensing an external environment to generate a corresponding electrical signal, and in a thickness direction of the array substrate, an orthographic projection area of each of the at least one sensing unit on the base substrate is located within an orthographic projection area of the second pixel electrode of the pixel electrodes on the base substrate,
wherein a source of the second driving thin film transistor is connected to a data line, and a drain of the second driving thin film transistor is connected to the corresponding one of the pixel electrodes.