US 12,111,346 B2
Crack detector units and the related semiconductor dies and methods
Huan-Neng Chen, Taichung (TW); and Shao-Yu Li, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 18, 2022, as Appl. No. 17/697,925.
Prior Publication US 2023/0296659 A1, Sep. 21, 2023
Int. Cl. G01R 31/26 (2020.01); H01L 21/66 (2006.01); H01L 23/58 (2006.01)
CPC G01R 31/2601 (2013.01) [H01L 22/34 (2013.01); H01L 23/585 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A crack detector unit (CDU), comprising:
a switching circuit configured to enable a crack sensor;
the crack sensor configured to be electrically connected to the switching circuit, the ground, and an operating voltage; and
a logic circuit configured to be electrically connected to the switching circuit and the crack sensor, wherein the CDU is enabled based on an input of the logic circuit, and an output of the logic circuit indicates whether the crack sensor contains a crack,
wherein the switching circuit comprises a p-type metal-oxide-semiconductor field-effect transistors (PMOS), a source electrode of the PMOS is connected to the operating voltage, a drain electrode of the PMOS is connected to the crack sensor and the logic circuit, and a gate electrode of the PMOS is connected to the logic circuit.