US 12,111,114 B2
Heat transfer element, method for forming the same and semiconductor structure comprising the same
Hung-Hsien Huang, Kaohsiung (TW); Shin-Luh Tarng, Kaohsiung (TW); Ian Hu, Kaohsiung (TW); Chien-Neng Liao, Hsinchu (TW); Jui-Cheng Yu, Hsinchu (TW); and Po-Cheng Huang, Tainan (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Jan. 29, 2021, as Appl. No. 17/163,217.
Prior Publication US 2022/0243992 A1, Aug. 4, 2022
Int. Cl. F28D 15/04 (2006.01); F28D 15/02 (2006.01); F28F 13/18 (2006.01)
CPC F28D 15/046 (2013.01) [F28D 15/0233 (2013.01); F28D 15/0283 (2013.01); F28F 13/187 (2013.01); F28F 2255/18 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A heat transfer element, comprising:
a housing including an upper portion and a lower portion, the upper portion including a base and a side wall connected to the base, wherein the side wall contacts the lower portion;
a chamber defined by the upper portion and the lower portion;
a first dendritic layer disposed in the chamber and on an inner lateral surface of the side wall of the upper portion;
a second dendritic layer disposed on an upper surface of the lower portion, and spaced apart from a bottom end surface of the first dendritic layer, wherein a space is collectively defined by the bottom end surface of the first dendritic layer and a lateral end surface of the second dendritic layer, and exposes an interface between the side wall of the upper portion and the lower portion, wherein the bottom end surface of the first dendritic layer at least partially non-overlaps the second dendritic layer vertically; and
a hole penetrating a second side wall of the upper portion, wherein the bottom end surface of the first dendritic layer overlaps the hole horizontally.