| CPC C23C 18/1685 (2013.01) [C23C 18/163 (2013.01); H01L 21/02101 (2013.01); H01L 21/67028 (2013.01); H01L 21/67034 (2013.01)] | 16 Claims |
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1. An apparatus for fabricating a semiconductor device, the apparatus comprising:
a chamber configured to accommodate a substrate coated with a first fluid;
a lower inlet which is placed in a lower wall of the chamber and configured to provide a first supercritical fluid into the chamber;
an upper inlet placed in an upper wall of the chamber and configured to provide a second supercritical fluid into the chamber;
a fluid outlet placed in the lower wall of the chamber and configured to discharge a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber; and
a drain cup placed between the lower wall of the chamber and the substrate,
wherein the drain cup includes a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other,
wherein the second portion of the drain cup is fixedly attached to a first position of the lower wall of the chamber,
wherein the first position of the lower wall of the chamber is disposed between the lower inlet and the fluid outlet,
wherein the drain cup is located above the lower wall of the chamber, and a gap is located between the first portion of the drain cup and the lower wall of the chamber,
wherein the drain cup further includes a connecting groove formed in the first portion of the drain cup, and
wherein at least a part of a first protrusion portion of the chamber is inserted into the connecting groove of the drain cup.
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