US 12,110,584 B2
Low temperature growth of transition metal chalcogenides
Chandan Das, Singapore (SG); Susmit Singha Roy, Sunnyvale, CA (US); Bhaskar Jyoti Bhuyan, San Jose, CA (US); John Sudijono, Singapore (SG); Abhijit Basu Mallick, Palo Alto, CA (US); and Mark Saly, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 28, 2021, as Appl. No. 17/361,231.
Prior Publication US 2022/0411918 A1, Dec. 29, 2022
Int. Cl. C23C 16/30 (2006.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C23C 16/448 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/305 (2013.01) [C23C 16/04 (2013.01); C23C 16/06 (2013.01); C23C 16/4485 (2013.01); H01L 21/0228 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of depositing a film, the method comprising:
forming a transition metal oxide film on a substrate surface, forming the transition metal oxide film comprises forming a transition metal film followed by oxidizing the transition metal film by exposing the transition metal film to a plasma treatment of one or more of O2 or O3 to form the transition metal oxide film; and
converting the transition metal oxide film to a transition metal dichalcogenide film.