US 12,110,421 B2
Composition for semiconductor processing and method of fabricating semiconductor device using the same
Seung Chul Hong, Seoul (KR); Deok Su Han, Seoul (KR); and Han Teo Park, Seoul (KR)
Assigned to SK ENPULSE CO., LTD., Gyeonggi-do (KR)
Filed by SK enpulse Co., Ltd., Gyeonggi-do (KR)
Filed on Jan. 6, 2022, as Appl. No. 17/570,230.
Claims priority of application No. 10-2021-0002454 (KR), filed on Jan. 8, 2021.
Prior Publication US 2022/0220340 A1, Jul. 14, 2022
Int. Cl. C09G 1/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/31053 (2013.01); H01L 21/3212 (2013.01)] 13 Claims
 
1. A composition for semiconductor processing containing:
abrasive particles surface-modified with a silane composition; and at least one additive, and being for application to polishing of a surface of a semiconductor wafer having a through silicon via (TSV),
wherein the at least one additive includes a phosphoric acid-based compound, an organic acid and an azole-based compound, and
the total weight of the phosphoric acid-based compound is 0.35 parts by weight to about 2.00 parts by weight based on 100 parts by weight of the total weight of the organic acid and the azole-based compound,
wherein the abrasive particles comprise silica (SiO2),
wherein a ratio of RN to RCu (RN/RCu) for the composition for semiconductor processing is greater than about 0.50 to less than or equal to about 2.00,
wherein the value calculated according to Equation 1 for the composition for semiconductor processing is greater than 11.0 to less than or equal to 110.0:

OG Complex Work Unit Math
wherein RO is the removal rate (Å/min) of a silicon oxide layer during polishing using the composition for semiconductor processing, RN is the removal rate (Å/min) of a silicon nitride layer during polishing using the composition for semiconductor processing, and RCu is the removal rate (Å/min) of a copper layer during polishing using the composition for semiconductor processing; and each of the removal rate of the silicon oxide layer, the removal rate of the silicon nitride layer, and the removal rate of the copper layer is a value obtained by performing polishing on a wafer having each of the layers for 60 seconds under conditions of a carrier pressing pressure of 3.0 psi, a carrier rotation speed of 120 rpm and a surface plate rotation speed of 117 rpm while supplying the composition for semiconductor processing at a flow rate of 300 mL/min.