US 12,110,409 B2
Painted metal plate and method for producing same
Keiko Takiguchi, Tokyo (JP); Masaki Satou, Tokyo (JP); Seiju Suzuki, Tokyo (JP); and Shuichi Sugita, Tokyo (JP)
Assigned to Nippon Steel Corporation, Tokyo (JP)
Appl. No. 17/282,019
Filed by Nippon Steel Corporation, Tokyo (JP)
PCT Filed Apr. 10, 2019, PCT No. PCT/JP2019/015632
§ 371(c)(1), (2) Date Apr. 1, 2021,
PCT Pub. No. WO2020/070913, PCT Pub. Date Apr. 9, 2020.
Claims priority of application No. 2018-188120 (JP), filed on Oct. 3, 2018.
Prior Publication US 2021/0340400 A1, Nov. 4, 2021
Int. Cl. C09D 127/16 (2006.01); B05D 3/08 (2006.01); B05D 7/14 (2006.01); C23C 2/26 (2006.01); C23C 26/00 (2006.01)
CPC C09D 127/16 (2013.01) [B05D 3/08 (2013.01); B05D 7/14 (2013.01); C23C 2/26 (2013.01); C23C 26/00 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A coated metal sheet, comprising: a metal sheet; and a fluorinated coating film formed on the metal sheet, wherein
the coating film contains a cured product of a silicone resin, and a fluorine-containing resin;
an amount of the cured product of the silicone resin is 1 to 10 parts by mass of a total mass of the coating film;
the silicone resin contains Si atoms derived from trialkoxysilane in an amount of 50 to 100 mol % relative to the total number of moles of Si atoms;
a weight average molecular weight of the silicone resin is 1000 to 10000;
when a surface of the coating film is analyzed with X-ray electron spectroscopy using an A1Kα ray as an X-ray source, Sia and x satisfy the following expressions respectively, wherein Sia is a proportion of Si atoms based on a total amount of Si atoms, F atoms, C atoms, and O atoms, and x is a ratio of an amount of O atoms to an amount of C atoms:
Sia≥8 atm %
x≥0.8; and
when a C1s peak top in an X-ray photoelectron spectroscopic spectrum obtained through the analysis with X-ray electron spectroscopy is corrected to be 285 eV and a Si2p spectrum is separated into a peak corresponding to 103.5 eV and a peak corresponding to 102.7 eV, y satisfies the following expression, wherein y is a ratio of a peak area of 103.5 eV to a peak area of the entire Si2p spectrum:
y≥0.6.