US 11,785,852 B2
Microphone device with single crystal piezoelectric film and method of forming the same
You Qian, Singapore (SG); Joan Josep Giner De Haro, Singapore (SG); and Rakesh Kumar, Singapore (SG)
Assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD., Singapore (SG)
Filed by VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD., Singapore (SG)
Filed on Nov. 3, 2022, as Appl. No. 17/979,783.
Application 17/979,783 is a division of application No. 16/722,143, filed on Dec. 20, 2019, granted, now 11,527,700.
Prior Publication US 2023/0051656 A1, Feb. 16, 2023
Int. Cl. H10N 30/067 (2023.01); H10N 30/073 (2023.01); H04R 17/02 (2006.01); H10N 30/08 (2023.01); H10N 30/87 (2023.01); H10N 30/00 (2023.01); H10N 30/06 (2023.01)
CPC H10N 30/067 (2023.02) [H04R 17/02 (2013.01); H10N 30/06 (2023.02); H10N 30/073 (2023.02); H10N 30/08 (2023.02); H10N 30/1051 (2023.02); H10N 30/872 (2023.02); B81B 2201/0257 (2013.01); B81C 2201/013 (2013.01); B81C 2201/016 (2013.01); B81C 2201/019 (2013.01); B81C 2201/0167 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of forming a microphone device, the method comprising:
forming a through-hole in a substrate wafer;
providing a second wafer, wherein the second wafer comprises a single-crystal piezoelectric film having a first surface and an opposing second surface, a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film;
bonding the second wafer to the substrate wafer; and
forming a top electrode over the first surface of the single-crystal piezoelectric film;
wherein the through-hole in the substrate wafer is at least substantially aligned with at least one of the top electrode and the bottom electrode.