CPC H10N 30/067 (2023.02) [H04R 17/02 (2013.01); H10N 30/06 (2023.02); H10N 30/073 (2023.02); H10N 30/08 (2023.02); H10N 30/1051 (2023.02); H10N 30/872 (2023.02); B81B 2201/0257 (2013.01); B81C 2201/013 (2013.01); B81C 2201/016 (2013.01); B81C 2201/019 (2013.01); B81C 2201/0167 (2013.01)] | 8 Claims |
1. A method of forming a microphone device, the method comprising:
forming a through-hole in a substrate wafer;
providing a second wafer, wherein the second wafer comprises a single-crystal piezoelectric film having a first surface and an opposing second surface, a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film;
bonding the second wafer to the substrate wafer; and
forming a top electrode over the first surface of the single-crystal piezoelectric film;
wherein the through-hole in the substrate wafer is at least substantially aligned with at least one of the top electrode and the bottom electrode.
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