US 11,785,763 B2
Semiconductor devices having contact plugs
Wooyoung Choi, Seoul (KR); Juseong Oh, Seoul (KR); and Yoosang Hwang, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 4, 2022, as Appl. No. 17/568,440.
Claims priority of application No. 10-2021-0076645 (KR), filed on Jun. 14, 2021.
Prior Publication US 2022/0399343 A1, Dec. 15, 2022
Int. Cl. H01L 21/768 (2006.01); H10B 12/00 (2023.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); G11C 5/10 (2006.01)
CPC H10B 12/37 (2023.02) [G11C 5/10 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 28/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate extending in a first direction and a second direction perpendicular to the first direction, and including a cell area having a first active region and a peripheral circuit area having a second active region;
a direct contact contacting the first active region in the cell area;
a bit line structure disposed on the direct contact;
a capacitor structure electrically connected to the first active region;
a gate structure disposed on the second active region in the peripheral circuit area;
lower wiring layers disposed adjacent to the gate structure and electrically connected to the second active region;
upper wiring layers disposed on the lower wiring layers;
a wiring insulating layer disposed between the lower wiring layers and the upper wiring layers; and
upper contact plugs connected to at least one of the lower wiring layers and the upper wiring layers and extending through the wiring insulating layer in a third direction perpendicular to the first direction and the second direction,
wherein the upper contact plugs includes a first upper contact plug that extends through the wiring insulating layer and extends through at least a portion of the upper wiring layers and the lower wiring layers.