CPC H01L 29/66795 (2013.01) [H01L 29/0665 (2013.01); H01L 29/408 (2013.01); H01L 29/785 (2013.01); H01L 29/7855 (2013.01)] | 20 Claims |
1. An integrated circuit (IC) device, comprising:
a transistor arrangement that includes:
a fin stack of one or more semiconductor materials having a shape of a fin extending away from a base, the fin comprising a subfin portion and a channel portion, the subfin portion being closer to the base than the channel portion;
a gate wrapping around the channel portion of the fin;
a liner on sidewalls of the subfin portion of the fin; and
an insulator material surrounding the sidewalls,
wherein the liner includes fixed charges and is between the sidewalls and the insulator material, the insulator material is in contact with the base, and a portion of the liner that is farthest away from the base is at a same distance from the base as a portion of the gate that is closest to the base.
|