US 11,784,224 B2
Lateral bipolar transistor structure with base over semiconductor buffer and related method
Hong Yu, Clifton Park, NY (US); Jagar Singh, Clifton Park, NY (US); Zhenyu Hu, Clifton Park, NY (US); and John J. Pekarik, Underhill, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Nov. 17, 2021, as Appl. No. 17/455,290.
Claims priority of provisional application 63/237,244, filed on Aug. 26, 2021.
Prior Publication US 2023/0061482 A1, Mar. 2, 2023
Int. Cl. H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/1008 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/401 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/6625 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A lateral bipolar transistor structure comprising:
a doped semiconductor region within a substrate, the doped semiconductor region including a material composition distinct from a material composition of the substrate;
an emitter/collector (E/C) layer over an insulator over the substrate, the E/C layer having a first doping type;
a semiconductor buffer adjacent the insulator; and
a base layer on the semiconductor buffer and adjacent the E/C layer, the base layer including a lower surface below the E/C layer and an upper surface above the E/C layer, wherein the base layer has a second doping type opposite the first doping type.