US 11,784,196 B2
Trenchless single-photon avalanche diodes
Ping Zheng, Singapore (SG); Eng Huat Toh, Singapore (SG); Kiok Boone Elgin Quek, Singapore (SG); Kien Seen Daniel Chong, Singapore (SG); and Jing Hua Michelle Tng, Singapore (SG)
Assigned to GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on May 4, 2021, as Appl. No. 17/307,323.
Prior Publication US 2022/0359580 A1, Nov. 10, 2022
Int. Cl. H01L 27/00 (2006.01); H01L 27/146 (2006.01); H01L 31/107 (2006.01)
CPC H01L 27/1461 (2013.01) [H01L 27/1463 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 31/107 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure for a single-photon avalanche detector, the structure comprising:
a semiconductor substrate having a top surface;
a semiconductor layer on the top surface of the semiconductor substrate;
a light-absorbing layer on a portion of the semiconductor layer;
a first doped region in the portion of the semiconductor layer, the first doped region positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer;
a second doped region in the semiconductor substrate adjacent to the semiconductor layer; and
a deep trench isolation structure coupled to the second doped region, the deep trench isolation structure surrounding the portion of the semiconductor layer, and the deep trench isolation structure positioned fully over the top surface of the semiconductor substrate.