US 11,784,188 B2
Semiconductor integrated circuit device
Toshio Hino, Yokohama (JP); and Junji Iwahori, Yokohama (JP)
Assigned to SOCIONEXT INC., Kanagawa (JP)
Filed by SOCIONEXT INC., Kanagawa (JP)
Filed on Jun. 13, 2022, as Appl. No. 17/838,895.
Application 17/838,895 is a continuation of application No. 17/065,875, filed on Oct. 8, 2020, granted, now 11,387,256.
Application 17/065,875 is a continuation of application No. 16/287,907, filed on Feb. 27, 2019, granted, now 10,840,263, issued on Nov. 17, 2020.
Application 16/287,907 is a continuation of application No. PCT/JP2017/027524, filed on Jul. 28, 2017.
Claims priority of application No. 2016-166999 (JP), filed on Aug. 29, 2016.
Prior Publication US 2022/0310658 A1, Sep. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/118 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01)
CPC H01L 27/11807 (2013.01) [H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 29/78 (2013.01); H01L 2027/11812 (2013.01); H01L 2027/11862 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11881 (2013.01); H01L 2027/11892 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor integrated circuit device comprising:
a standard cell which is a capacitor cell, wherein
the standard cell includes:
a first power supply interconnect extending in a first direction and supplying a first power supply voltage;
a second power supply interconnect extending in the first direction and supplying a second power supply voltage;
a capacitor provided between the first power supply interconnect and the second power supply interconnect, and including a three-dimensional transistor device;
a first interconnect supplying the second power supply voltage; and
a second interconnect supplying the first power supply voltage,
the first and second power supply interconnects are provided in a first metal interconnect layer,
the first interconnect includes:
a first portion extending in the first direction and adjacent to the second power supply interconnect, the first portion being an interconnect closest to the second power supply interconnect in the first metal interconnect layer;
a second portion extending in the first direction, the second portion being provided in the first metal interconnect layer; and
a third portion extending in a second direction perpendicular to the first direction and connecting the first portion and the second portion together, and
the second interconnect includes:
a fourth portion extending in the first direction and arranged on an opposite side of the first portion of the first interconnect from the second power supply interconnect in the first metal interconnect layer, the fourth portion of the second interconnect and the second portion of the first interconnect being adjacent to each other.