US 11,784,135 B2
Semiconductor device including conductive bumps to improve EMI/RFI shielding
Jiandi Du, Shanghai (CN); Binbin Zheng, Shanghai (CN); Rui Guo, Shanghai (CN); Chin-Tien Chiu, Taichung (TW); Zengyu Zhou, Shanghai (CN); and Fen Yu, Shanghai (CN)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Jun. 22, 2021, as Appl. No. 17/354,119.
Prior Publication US 2022/0406726 A1, Dec. 22, 2022
Int. Cl. H01L 23/552 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 23/49838 (2013.01); H01L 24/13 (2013.01); H01L 25/0652 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13647 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/3025 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising:
one or more conductive layers, a layer of the one or more conductive layers comprising peripheral contact pads around one or more edges of the substrate, and
conductive bumps formed on the peripheral contact pads and comprising severed edges at the one or more edges of the substrate;
one or more semiconductor dies mounted on the substrate and electrically coupled to the substrate;
an enclosure housing the one or more semiconductor dies; and
an electrically conductive coating disposed on the enclosure configured to shield the semiconductor device against the transmission and/or reception of at least one of electromagnetic interference and radio frequency interference, the electrically conductive coating electrically coupled to the severed edges of the conductive bumps;
wherein the conductive bumps are severed during singulation of the semiconductor device from a panel.