US 11,784,107 B1
Semiconductor device passive thermal management
John A. Starkovich, Redondo Beach, CA (US); Jesse B. Tice, Torrance, CA (US); and Vincent Gambin, Torrance, CA (US)
Assigned to Northrop Grumman Systems Corporation, Falls Church, VA (US)
Filed by Northrop Grumman Systems Corporation, Falls Church, VA (US)
Filed on Sep. 26, 2022, as Appl. No. 17/952,433.
Application 17/952,433 is a division of application No. 15/671,432, filed on Aug. 8, 2017, granted, now 11,488,889.
Int. Cl. H01L 23/373 (2006.01)
CPC H01L 23/3735 (2013.01) [H01L 23/3736 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first layer having a first layer conductive contact and being doped at a first concentration of a first dopant type, the first dopant type being a P type dopant;
a second layer on top the first layer and being doped at a second concentration of the first dopant type, the second concentration being less than the first concentration, wherein the first layer provides improved thermal conductivity while having a coefficient of thermal expansion (CTE) matching a CTE of one or more of sapphire, GaAs, and InP;
a third layer on top of the second layer and having a third layer conductive contact and being doped with a second dopant type, the second dopant type being an N type dopant, wherein the first layer removes heat from one or more of the second layer and the third layer; and
a fourth layer on top of the third layer and having a fourth layer conductive contact and being doped with the first dopant type, wherein at least one of the first and second layers is a cubic boron arsenide (BAs) layer, wherein the third layer comprises a hot-spot, the hot-spot configured to remove heat from the third layer and from the second layer.