US 11,782,102 B2
Hall sensor with dielectric isolation and p-n junction isolation
Keith Ryan Green, Prosper, TX (US); Erika Lynn Mazotti, San Martin, CA (US); William David French, San Jose, CA (US); and Ricky Alan Jackson, Richardson, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Oct. 22, 2021, as Appl. No. 17/508,706.
Prior Publication US 2023/0129179 A1, Apr. 27, 2023
Int. Cl. G01R 33/07 (2006.01); G01R 33/00 (2006.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01); H10N 52/00 (2023.01)
CPC G01R 33/072 (2013.01) [G01R 33/0052 (2013.01); G01R 33/077 (2013.01); H10N 52/01 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a substrate including a semiconductor material; and
a Hall sensor, including:
a Hall plate in the semiconductor material, the Hall plate having a first conductivity type;
a contact region of the Hall sensor in the semiconductor material contacting the Hall plate, the contact region having the first conductivity type;
an isolation structure including dielectric material on two opposite sides of the contact region, the isolation structure being laterally separated from the contact region by a gap, the isolation structure contacting the semiconductor material; and
a conductive spacer of electrically conductive material over the gap, the conductive spacer being separated from the semiconductor material by an insulating layer.