US 11,781,241 B2
Silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot
Ching-Shan Lin, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2021, as Appl. No. 17/385,925.
Claims priority of provisional application 63/056,729, filed on Jul. 27, 2020.
Claims priority of provisional application 63/056,728, filed on Jul. 27, 2020.
Prior Publication US 2022/0025543 A1, Jan. 27, 2022
Int. Cl. C30B 23/02 (2006.01); C30B 29/36 (2006.01); C30B 23/06 (2006.01); C01B 32/956 (2017.01); H01L 29/30 (2006.01)
CPC C30B 23/025 (2013.01) [C30B 23/066 (2013.01); C30B 29/36 (2013.01); C01B 32/956 (2017.08); H01L 29/30 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A silicon carbide seed crystal, wherein the silicon carbide seed crystal comprises a silicon surface and a carbon surface opposite to the silicon surface, wherein a difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies a formula (1) as follows:
D=(BPD1−BPD2)/BPD1≤25%  (1),
wherein a threading screw dislocation (TSD) density of a silicon carbide ingot grown by the silicon carbide seed crystal is 35 EA/cm2 or less.