CPC C30B 23/025 (2013.01) [C30B 23/066 (2013.01); C30B 29/36 (2013.01); C01B 32/956 (2017.08); H01L 29/30 (2013.01)] | 5 Claims |
1. A silicon carbide seed crystal, wherein the silicon carbide seed crystal comprises a silicon surface and a carbon surface opposite to the silicon surface, wherein a difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies a formula (1) as follows:
D=(BPD1−BPD2)/BPD1≤25% (1),
wherein a threading screw dislocation (TSD) density of a silicon carbide ingot grown by the silicon carbide seed crystal is 35 EA/cm2 or less.
|