US 12,439,832 B2
Semiconductor device and method for fabricating the same
Hung-Chan Lin, Tainan (TW); Yu-Ping Wang, Hsinchu (TW); and Chien-Ting Lin, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 21, 2024, as Appl. No. 18/611,729.
Application 18/611,729 is a continuation of application No. 17/500,971, filed on Oct. 14, 2021, granted, now 11,968,910.
Claims priority of application No. 202111067661.2 (CN), filed on Sep. 13, 2021.
Prior Publication US 2024/0237554 A1, Jul. 11, 2024
Int. Cl. H10N 52/01 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC H10N 52/01 (2023.02) [H10B 61/00 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a magnetic tunneling junction (MTJ) on a substrate;
a first spin orbit torque (SOT) layer on the MTJ;
a spacer adjacent to and directly contacting the MTJ and the first SOT layer, wherein top surfaces of the spacer and the first SOT layer are coplanar and a bottom surface of the spacer is lower than a bottom surface of the MTJ; and
a second SOT layer on the first SOT layer, wherein the first SOT layer and the second SOT layer are made of same material.