US 12,439,830 B2
Magnetic memory device including magnetic tunnel junction patterns with non-uniform widths
Yongjae Kim, Suwon-si (KR); Kuhoon Chung, Seoul (KR); Gwanhyeob Koh, Seoul (KR); Bae-Seong Kwon, Incheon (KR); and Kyungtae Nam, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 25, 2024, as Appl. No. 18/752,866.
Application 18/752,866 is a division of application No. 17/083,943, filed on Oct. 29, 2020, granted, now 12,058,941.
Claims priority of application No. 10-2020-0012067 (KR), filed on Jan. 31, 2020.
Prior Publication US 2024/0349621 A1, Oct. 17, 2024
Int. Cl. H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01)
CPC H10N 50/80 (2023.02) [H10B 61/20 (2023.02); H10N 50/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device, comprising:
a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on a substrate,
wherein the magnetic tunnel junction pattern comprises:
a free layer;
a pinned layer between the bottom electrode and the free layer; and
a tunnel barrier layer between the pinned layer and the free layer,
wherein, in a direction parallel to a top surface of the substrate, a middle portion of the pinned layer is wider than an upper portion of the pinned layer and is wider than a lower portion of the pinned layer.