US 12,439,829 B2
Magnetoresistive random access memory and method for fabricating the same
Hui-Lin Wang, Taipei (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Oct. 24, 2022, as Appl. No. 17/971,651.
Claims priority of application No. 202211162585.8 (CN), filed on Sep. 23, 2022.
Prior Publication US 2024/0114803 A1, Apr. 4, 2024
Int. Cl. H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A method for fabricating semiconductor device, comprising:
forming a magnetic tunneling junction (MTJ) on a substrate, wherein the MTJ comprises:
a pinned layer on the substrate;
a barrier layer on the pinned layer; and
a free layer on the barrier layer, wherein the free layer comprises a magnesium oxide (MgO) compound and the free layer further comprising:
a first cap layer on the barrier layer;
a spacer on the first cap layer; and
a second cap layer on the spacer.