US 12,439,790 B2
Thin film transistor array substrate and electronic device including the same
Younghyun Ko, Paju-si (KR); and ChanYong Jeong, Paju-si (KR)
Assigned to LG Display Co., Ltd, (KR)
Filed by LG DISPLAY CO., LTD., Seoul (KR)
Filed on Jul. 28, 2021, as Appl. No. 17/387,342.
Claims priority of application No. 10-2020-0140671 (KR), filed on Oct. 27, 2020.
Prior Publication US 2022/0130944 A1, Apr. 28, 2022
Int. Cl. H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01); H10K 71/40 (2023.01)
CPC H10K 59/1315 (2023.02) [H10K 71/00 (2023.02); H10K 59/1201 (2023.02); H10K 71/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a panel comprising at least one thin film transistor; and
a driving circuit for driving the panel,
wherein the panel further comprising:
a substrate;
an auxiliary layer disposed on the substrate;
a gate electrode and first and second electrodes disposed on the auxiliary layer and spaced apart from one another;
a gate insulating film disposed on the gate electrode; and
an active layer disposed on or over the gate insulating film and the first and second electrodes, and including a first region, a second region spaced apart from the first region, a channel region disposed between the first region and the second region, a first auxiliary region extending from the first region and spaced apart from the channel region, and a second auxiliary region extending from the second region and spaced apart from the channel region,
wherein an electrical resistance of each of the first auxiliary region and the second auxiliary region is lower than that of the channel region and higher than that of each of the first and second regions,
wherein the active layer further comprising:
a third auxiliary region extending from the first region and disposed between the first region and the channel region;
a fourth auxiliary region extending from the second region and disposed between the second region and the channel region;
a fifth auxiliary region disposed between the third auxiliary region and the channel region; and
a sixth auxiliary region disposed between the fourth auxiliary region and the channel region,
wherein an electrical resistance of each of the fifth auxiliary region and the sixth auxiliary region is lower than that of either the channel region or each of the first to fourth auxiliary regions and higher than that of each of the first and second regions.