US 12,439,769 B2
Perovskite photoelectric device and manufacturing method thereof
Sang Hyuk Im, Hwaseong-si (KR); and Jin Hyuck Heo, Seoul (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Appl. No. 17/633,247
Filed by Korea University Research and Business Foundation, Seoul (KR)
PCT Filed Aug. 7, 2020, PCT No. PCT/KR2020/010471
§ 371(c)(1), (2) Date Feb. 7, 2022,
PCT Pub. No. WO2021/025519, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 10-2019-0096387 (KR), filed on Aug. 8, 2019.
Prior Publication US 2023/0225140 A1, Jul. 13, 2023
Int. Cl. H10K 50/11 (2023.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/169 (2025.01); H10K 71/12 (2023.01)
CPC H10K 50/11 (2023.02) [H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/169 (2025.01); H10K 71/12 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A perovskite photoelectric device, comprising:
a first electrode;
a hole transport layer formed on the first electrode;
a perovskite layer formed on the hole transport layer and made of a first perovskite compound;
an electron transport layer formed on the perovskite layer;
a second electrode formed on the electron transport layer; and
a graded wall formed on the hole transport layer and the perovskite layer and made of a second perovskite compound,
wherein the first perovskite compound and the second perovskite compound are represented by Formula 1 below,
the graded wall suppresses movement of anions comprised in the perovskite layer, and
wherein an anion concentration at the graded wall is higher than an anion concentration at the perovskite layer so that movement of anions comprised in the perovskite layer is suppressed:
AaMbXc  [Formula 1]
where A is a monovalent cation, M is a divalent or trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3B=c when M is a trivalent metal cation, and a, b and c are natural numbers.