| CPC H10K 30/57 (2023.02) [H10F 71/1375 (2025.01); H10F 77/127 (2025.01); H10F 77/1433 (2025.01); H10F 77/211 (2025.01); H10F 77/247 (2025.01); H10F 77/251 (2025.01); H10K 85/50 (2023.02); H10F 77/143 (2025.01); H10F 77/1437 (2025.01); H10F 77/146 (2025.01); H10K 10/82 (2023.02); H10K 30/211 (2023.02); H10K 30/30 (2023.02); H10K 30/50 (2023.02)] | 17 Claims |

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1. A method of fabricating a photovoltaic cell, the method comprising:
performing optical simulations and selecting, based on the optical simulations
(i) a thickness of at least one of a first active layer, a second active layer, a third active layer, and optionally a fourth active layer, and
(ii) one or more active materials of at least one of the first active layer, the second active layer, the third active layer, and optionally the fourth active layer; wherein the photovoltaic cell comprises
a first electrode;
a first layer stack;
a second layer stack, wherein the first layer stack is arranged between the first electrode and the second layer stack;
a second electrode, wherein the second layer stack is arranged between the first layer stack and the second electrode;
a third layer stack arranged between the second layer stack and the second electrode; and
optionally a fourth layer stack arranged between the third layer stack and the second electrode;
wherein the first layer stack comprises a first hole transporting layer, the first active layer, and a first electron transporting layer, wherein the first active layer is arranged between the first hole transporting layer and the first electron transporting layer;
wherein the second layer stack comprises a second hole transporting layer, the second active layer, and a second electron transporting layer, wherein the second active layer is arranged between the second hole transporting layer and the second electron transporting layer;
wherein the third layer stack comprises a third hole transporting layer, the third active layer, and a third electron transporting layer, wherein the third active layer is arranged between the third hole transporting layer and the third electron transporting layer;
wherein the fourth layer stack, when present, comprises a fourth hole transporting layer, the fourth active layer, and a fourth electron transporting layer, wherein the fourth active layer is arranged between the fourth hole transporting layer and the fourth electron transporting layer;
wherein the first active layer, the second active layer, the third active layer, and the fourth active layer comprise one or more active materials that are independently selected from the group consisting of poly (3-hexylthiophene-2,5-diyl) (P3HT), indene-C60 bisadduct (ICBA), poly ([2,6′-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2 [(2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7-Th), [6,6]-phenyl-C71-butyric acid methyl ester (PCMB), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b: 2′,3′-d]pyran)-alt-4,7-(5,6-dirluoro-2,1,3-benzothia diazole) (PDTP-DFBT), poly[[2,5-bis(2-hexyldecyl-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl]-alt-[3′,3″-dimethyl-2,2′: 5′,2″-terthiphene]-5,5″-diyl] (PMDPP3T), poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b: 4,5-b′]dithiophene-2,6-diyl]] (Si-PCPDTBT), methylammonium lead iodide (MaPbI3), and lead (II) sulfide (PbS); and
wherein the first active layer, the second active layer, or the third active layer does not include MaPbI3 or any other perovskite.
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