US 12,439,763 B2
Electrically gated nanostructure devices
Eric Meshot, Livermore, CA (US); and Steven Buchsbaum, Livermore, CA (US)
Assigned to Lawrence Livermore National Security, LLC, Livermore, CA (US)
Filed by Lawrence Livermore National Security, LLC, Livermore, CA (US)
Filed on Feb. 8, 2021, as Appl. No. 17/170,685.
Claims priority of provisional application 62/972,320, filed on Feb. 10, 2020.
Prior Publication US 2021/0249618 A1, Aug. 12, 2021
Int. Cl. H10K 10/46 (2023.01); G01N 27/414 (2006.01); H10K 85/20 (2023.01)
CPC H10K 10/484 (2023.02) [G01N 27/4146 (2013.01); H10K 10/481 (2023.02); H10K 85/221 (2023.02)] 22 Claims
OG exemplary drawing
 
1. A gated nanostructure device comprising:
a first substrate having a dielectric layer;
a source electrode and a drain electrode, wherein at least one of the source electrode and the drain electrode is on the dielectric layer of the first substrate;
a thick film comprising conducting carbon nanotubes between the source electrode and the drain electrode, wherein each carbon nanotube has an inner channel; and
a gate electrode above the dielectric layer of the first substrate, wherein the gate electrode modulates an electric current through the conducting carbon nanotubes between the source electrode and the drain electrode throughout a thickness of the thick film;
wherein the conducting carbon nanotubes comprise an exposed portion, which is exposed to an outside environment, and the inner channels of the conducting carbon nanotubes are at least partially aligned along a direction that is substantially parallel to a direction between the source electrode and the drain electrode.