US 12,439,753 B2
Flip-chip light emitting diode having connecting electrodes with multiple binding layers including eutectic system with tin
Shiwei Liu, Xiamen (CN); Gaolin Zheng, Xiamen (CN); Anhe He, Xiamen (CN); Qing Wang, Xiamen (CN); Su-Hui Lin, Xiamen (CN); Kang-wei Peng, Xiamen (CN); Ling-yuan Hong, Xiamen (CN); and Jiangbin Zeng, Xiamen (CN)
Assigned to XIAMEN SANAN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on May 25, 2022, as Appl. No. 17/664,950.
Application 17/664,950 is a continuation in part of application No. PCT/CN2020/087213, filed on Apr. 27, 2020.
Claims priority of application No. 201922201185.3 (CN), filed on Dec. 10, 2019.
Prior Publication US 2022/0285596 A1, Sep. 8, 2022
Int. Cl. H10H 20/857 (2025.01); H01L 23/00 (2006.01); H10H 20/813 (2025.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/841 (2025.01); H10H 20/85 (2025.01)
CPC H10H 20/857 (2025.01) [H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H10H 20/813 (2025.01); H01L 24/81 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05561 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16502 (2013.01); H01L 2224/81805 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a carrier substrate;
at least one flip-chip light-emitting diode (LED) which is mounted onto said carrier substrate; and
an electrode unit which is disposed between said carrier substrate and said flip-chip LED, and which includes a first connecting electrode and a second connecting electrode opposite in conductivity to said first connecting electrode,
wherein each of said first connecting electrode and said second connecting electrode includes an intermediate metal layer and a binding layer that are sequentially disposed on said flip-chip LED in such order, said binding layer including a first portion that is adjacent to said carrier substrate and that forms an eutectic system with tin, and a second portion that is located between said first portion and said intermediate metal layer,
wherein said second portion of said binding layer is made of a material free of tin, and
wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes a plurality of stress relieving sublayers, and at least one migration resisting sublayer, said at least one migration resisting sublayer being interposed between any two immediately adjacent ones of said plurality of stress relieving sublayers.