US 12,439,752 B2
Light emitting diode structure
Hsin-Chuan Wang, Hsinchu (TW); Tzong-Liang Tsai, Hsinchu (TW); Hsiu-Mei Chou, Hsinchu (TW); and Chin-Hung Luo, Hsinchu (TW)
Assigned to Lextar Electronics Corporation, Hsinchu (TW)
Filed by Lextar Electronics Corporation, Hsinchu (TW)
Filed on Mar. 17, 2022, as Appl. No. 17/655,174.
Claims priority of application No. 202110307377.1 (CN), filed on Mar. 23, 2021.
Prior Publication US 2022/0310894 A1, Sep. 29, 2022
Int. Cl. H10H 20/857 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/825 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting diode structure, comprising:
a substrate;
a first semiconductor layer, disposed on the substrate, and the first semiconductor layer comprising:
a first thickness structure; and
a second thickness structure, wherein a first thickness of the first thickness structure is substantially thicker than a second thickness of the second thickness structure;
a light emitting layer, disposed on the first thickness structure of the first semiconductor layer;
a second semiconductor layer, disposed on the light emitting layer, wherein a doping type of the second semiconductor layer is different from a doping type of the first semiconductor layer;
a plurality of semiconductor contacting layers, disposed on the second thickness structure of the first semiconductor layer, wherein vertical projections of the plurality of semiconductor contacting layers and the light emitting layer on the substrate don't overlap nor contact, and a doping type of the plurality of semiconductor contacting layers is the same as the doping type of the first semiconductor layer;
a first conductive layer, disposed on the plurality of semiconductor contacting layers; and
a second conductive layer, disposed on the second semiconductor layer.