US 12,439,750 B2
Light-emitting diode with three-dimensional contact structure, display screen and associated manufacturing method
Dominique Noguet, Grenoble (FR); and Badhise Ben Bakir, Grenoble (FR)
Assigned to COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Filed on Oct. 26, 2021, as Appl. No. 17/510,951.
Claims priority of application No. 2011082 (FR), filed on Oct. 29, 2020.
Prior Publication US 2022/0140219 A1, May 5, 2022
Int. Cl. H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/84 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/84 (2025.01); H10H 20/0364 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A light-emitting diode comprising:
a lower layer, at least partially made of a doped semiconductor,
an upper layer, at least partially made of a doped semiconductor, the lower and upper layers having dopings of opposite types,
an emissive structure, that extends between the lower layer and the upper layer and that is adapted to emit a light radiation when an electric current passes through it,
the upper layer being delimited by an upper surface, through which a portion at least of said light radiation exits,
the lower layer being delimited by a lower surface for injecting electric charges,
the upper surface of the upper layer forming a non-planar three-dimensional structure having hollow patterns, said surface being covered by a contact structure made of electrically-conductive materials, the contact structure extending against said surface, conforming to said non-planar surface,
wherein, for each of said patterns, an aspect ratio, equal to the extension of said pattern in said upper layer and in a direction perpendicular to said upper and lower layers, divided by a transverse dimension of said pattern in said upper layer and in a plane parallel to said upper and lower layers, is greater than or equal to 2,
wherein the contact structure comprises:
a first electrically-conductive material, that fills the hollow patterns, and
a contact layer made of a second electrically-conductive material that is at least partially transparent for said light radiation, the contact layer covering said upper surface and coming into contact with both the first electrically-conductive material and the doped semiconductor of the upper layer.