US 12,439,749 B2
Light emitting diode
Se Hee Oh, Ansan-si (KR); Hyun A Kim, Ansan-si (KR); Jong Kyu Kim, Ansan-si (KR); and Hyoung Jin Lim, Ansan-si (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on May 3, 2021, as Appl. No. 17/246,856.
Application 17/246,856 is a continuation of application No. 16/158,305, filed on Oct. 12, 2018, granted, now 10,998,479.
Application 16/158,305 is a continuation of application No. PCT/KR2017/004420, filed on Apr. 26, 2017.
Claims priority of application No. 10-2016-0054885 (KR), filed on May 3, 2016; application No. 10-2016-0065501 (KR), filed on May 27, 2016; and application No. 10-2016-0079392 (KR), filed on Jun. 24, 2016.
Prior Publication US 2021/0257528 A1, Aug. 19, 2021
Int. Cl. H10H 20/857 (2025.01); F21S 41/141 (2018.01); H01L 25/075 (2006.01); H10H 20/813 (2025.01); H10H 20/814 (2025.01); H10H 20/82 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/84 (2025.01); H10H 20/841 (2025.01); H10H 20/851 (2025.01); H10H 20/858 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/857 (2025.01) [H01L 25/0753 (2013.01); H10H 20/814 (2025.01); H10H 20/8252 (2025.01); H10H 20/831 (2025.01); H10H 20/835 (2025.01); H10H 20/84 (2025.01); H10H 20/851 (2025.01); H10H 20/858 (2025.01); H10H 29/14 (2025.01); F21S 41/141 (2018.01); H10H 20/813 (2025.01); H10H 20/82 (2025.01); H10H 20/821 (2025.01); H10H 20/8312 (2025.01); H10H 20/841 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A light emitting diode, comprising:
a substrate;
a first conductivity type semiconductor layer disposed on the substrate;
a mesa comprising a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer and an active layer interposed between the second conductivity type semiconductor layer and the first conductivity type semiconductor layer;
a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge of the first conductivity type semiconductor layer along a periphery of the mesa and an inner contact portion contacting the first conductivity type semiconductor layer in a region entirely surrounded by the mesa;
a second contact layer disposed on the mesa and contacting the second conductivity type semiconductor layer;
a first insulation layer covering the first conductivity type semiconductor layer and the mesa, and insulating the first contact layer from the mesa and the second contact layer,
wherein the first insulation layer exposes the first conductivity type semiconductor layer for the outer contact portion and the inner contact portion to contact the first conductivity type semiconductor layer,
wherein the first contact layer and the first insulation layer alternately contact the first conductivity type semiconductor layer in a direction along a periphery of the substrate,
wherein the first contact layer comprises a protrusion and a recess around the mesa, the protrusion of the first contact layer contacts the first conductivity type semiconductor layer, and the recess is disposed on the first insulation layer, and
wherein the protrusion and the recess are adjacent to each other in the direction along the periphery of the substrate in plan view.