| CPC H10H 20/855 (2025.01) [H01L 25/0753 (2013.01); H10H 20/84 (2025.01)] | 13 Claims |
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1. A micro device, comprising:
an epitaxial structure, having a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface;
an insulating layer, covering at least the bottom surface and part of the peripheral surface of the epitaxial structure;
an overcoat layer, comprising a contact portion and an extension portion, wherein the contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface;
a first light-guiding structure, disposed on the top surface of the epitaxial structure and the extension portion of the overcoat layer, wherein an orthogonal projection area of the first light-guiding structure on a horizontal plane is larger than an orthogonal projection area of the overcoat layer on the horizontal plane, and the orthogonal projection area of the overcoat layer on the horizontal plane is larger than an orthogonal projection area of the epitaxial structure on the horizontal plane; and
a second light-guiding structure, disposed on the first light-guiding structure, and the first light-guiding structure disposed between the epitaxial structure and the second light-guiding structure, wherein a first surface area of the first light-guiding structure is larger than a second surface area of the second light-guiding structure in a top view of the micro device,
wherein the epitaxial structure comprises a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, the light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer,
wherein a roughness of a first contact surface of the first light-guiding structure in a central region facing a side of the epitaxial structure and the first type semiconductor layer is greater than a roughness of a second contact surface of the first light-guiding structure in a periphery region surrounding the central region and the extension portion of the overcoat layer.
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