US 12,439,744 B2
Semiconductor device with a bond pad and a sandwich passivation layer and manufacturing method thereof
Ching-Lun Lee, Eindhoven (NL)
Assigned to ams-OSRAM AG, Premstaetten (AT)
Appl. No. 17/788,147
Filed by ams-OSRAM AG, Premstaetten (AT)
PCT Filed Dec. 18, 2020, PCT No. PCT/EP2020/087337
§ 371(c)(1), (2) Date Jun. 22, 2022,
PCT Pub. No. WO2021/130141, PCT Pub. Date Jul. 1, 2021.
Claims priority of provisional application 62/952,990, filed on Dec. 23, 2019.
Prior Publication US 2023/0029075 A1, Jan. 26, 2023
Int. Cl. H01L 33/44 (2010.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H10F 71/00 (2025.01); H10F 77/00 (2025.01); H10F 77/30 (2025.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/84 (2025.01) [H01L 23/3192 (2013.01); H01L 23/564 (2013.01); H10F 71/129 (2025.01); H10F 77/306 (2025.01); H10F 77/933 (2025.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01); H01L 24/05 (2013.01); H01L 2224/03009 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H10H 20/034 (2025.01); H10H 20/0364 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming a sandwich passivation layer on a semiconductor device comprising a bond pad, the method comprising:
forming a first layer over a surface of the semiconductor device and over a top surface of the bond pad;
removing a part of the first layer to expose the top surface of the bond pad;
forming a second layer over the first layer and the top surface of the bond pad; and
forming a third layer over the second layer;
wherein the top surface of the bond pad is not in contact with the first layer or third layer, and wherein a wettability of the first layer and third layer is higher than a wettability of the second layer.