US 12,439,743 B2
Light emitting diode device
Xiaoliang Liu, Xiamen (CN); Anhe He, Xiamen (CN); Kang-wei Peng, Xiamen (CN); Su-hui Lin, Xiamen (CN); Ling-yuan Hong, Xiamen (CN); and Chia-hung Chang, Xiamen (CN)
Assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed on Apr. 24, 2023, as Appl. No. 18/305,956.
Application 18/305,956 is a continuation of application No. 17/064,250, filed on Oct. 6, 2020, granted, now 11,637,223.
Application 17/064,250 is a continuation in part of application No. PCT/CN2018/082195, filed on Apr. 8, 2018.
Claims priority of application No. 202010252278.3 (CN), filed on Apr. 1, 2020.
Prior Publication US 2023/0268466 A1, Aug. 24, 2023
Int. Cl. H10H 20/832 (2025.01); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10H 20/841 (2025.01)
CPC H10H 20/835 (2025.01) [H10H 20/8312 (2025.01); H10H 20/841 (2025.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) device, comprising:
an epitaxial layered structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer sequentially disposed in such order, and having a recess-defining wall that defines a recess;
a current spreading layer formed on a surface of said second-type semiconductor layer opposite to said active layer;
a first insulating layer including a first portion that is formed on said recess-defining wall, and a second portion that is formed on said current spreading layer, said second portion being formed with at least one first through hole to expose a portion of said current spreading layer; and
a reflective structure formed on said first insulating layer and including a metallic reflecting layer that is formed on said second portion of said first insulating layer, that extends into said at least one first through hole to contact said current spreading layer, and that has a hole-defining wall defining a hole, said hole-defining wall being located between said first portion and said second portion of said first insulating layer;
wherein said first insulating layer is formed with at least one second through hole that separates said first portion from said second portion and that corresponds in position to said hole of said metallic reflecting layer, and said hole-defining wall of said metallic reflecting layer is located in said second through hole.