| CPC H10H 20/833 (2025.01) [C23C 14/082 (2013.01); C23C 14/34 (2013.01); H10H 20/01 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01)] | 19 Claims |

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1. A stacked body, comprising:
a semiconductor layer comprising a group III-V nitride semiconductor; and
an electrode layer comprising magnesium oxide and zinc oxide,
wherein the electrode layer has regions mainly composed of zinc oxide and regions mainly composed of magnesium oxide,
wherein the electrode layer has a molar ratio of magnesium based on a sum of magnesium and zinc, Mg/(Mg+Zn), in a range of from 0.25 to 0.75, and the electrode layer has a conductivity of 1.0×10−2 S/cm or more.
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