US 12,439,741 B2
Semiconductor light-emitting device package and display device comprising same
Bongseok Choi, Seoul (KR); Sungjin Park, Seoul (KR); Joonkwon Moon, Seoul (KR); and Taesu Oh, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 18/010,085
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Jun. 15, 2020, PCT No. PCT/KR2020/007732
§ 371(c)(1), (2) Date Dec. 13, 2022,
PCT Pub. No. WO2021/256574, PCT Pub. Date Dec. 23, 2021.
Prior Publication US 2024/0038933 A1, Feb. 1, 2024
Int. Cl. H10H 20/831 (2025.01); H01L 25/075 (2006.01); H10H 20/832 (2025.01); H10H 20/85 (2025.01); H10H 20/853 (2025.01); H10H 20/856 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01); H10H 20/01 (2025.01)
CPC H10H 20/831 (2025.01) [H01L 25/0753 (2013.01); H10H 20/835 (2025.01); H10H 20/853 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/0362 (2025.01); H10H 20/0364 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device package comprising:
a light emitting structure having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
a first electrode and a second electrode electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the light emitting structure, respectively;
an interlayer insulating layer disposed on a side surface of the light emitting structure; and
an adhesive layer disposed on the light emitting structure,
wherein the first electrode comprises a first reflective electrode and a first pad electrode,
wherein the second electrode also comprises a second reflective electrode and a second pad electrode,
wherein a cross-sectional shape of the first reflective electrode and the second reflective electrode comprises a cup shape, and
wherein a second horizontal width of the first reflective electrode or the second reflective electrode is longer than a horizontal width of the light emitting structure.