US 12,439,740 B2
Micro light-emitting diode device
Li-Yi Chen, Tainan (TW); and Hsin-Wei Lee, Tainan (TW)
Assigned to MIKRO MESA TECHNOLOGY CO., LTD., Apia (WS)
Filed by MIKRO MESA TECHNOLOGY CO., LTD., Apia (WS)
Filed on Mar. 13, 2023, as Appl. No. 18/182,388.
Prior Publication US 2024/0313160 A1, Sep. 19, 2024
Int. Cl. H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 20/833 (2025.01); H10H 20/853 (2025.01)
CPC H10H 20/825 (2025.01) [H10H 20/8312 (2025.01); H10H 20/833 (2025.01); H10H 20/853 (2025.01)] 24 Claims
OG exemplary drawing
 
1. A micro light-emitting diode device, comprising:
a substrate having an anode electrode thereon;
a micro light-emitting diode having a lateral width smaller than 100 μm, disposed on and in contact with the anode electrode, and comprising:
a p-type III-nitride layer;
a plurality of n-type III-nitride layers with a layer number of m sequentially stacked above the p-type III-nitride layer, wherein m is an integer greater than two, and a top layer and a next layer in contact with each other of the n-type III-nitride layers contain aluminum; and
an active layer between the p-type III-nitride layer and a bottom layer of the n-type III-nitride layers;
an isolation layer on the substrate and surrounding the micro light-emitting diode; and
a cathode transparent electrode at least partially in contact with a top surface of the top layer of the n-type III-nitride layers,
wherein a refractive index of the top layer of the n-type III-nitride layers is smaller than a refractive index of the next layer of the n-type III-nitride layers.