US 12,439,739 B2
Micro-nanofin LED element and method for producing same
Young Rag Do, Seoul (KR)
Assigned to KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION, Seoul (KR)
Appl. No. 17/997,265
Filed by KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION, Seoul (KR)
PCT Filed Apr. 27, 2021, PCT No. PCT/KR2021/005309
§ 371(c)(1), (2) Date Oct. 27, 2022,
PCT Pub. No. WO2021/221437, PCT Pub. Date Nov. 4, 2021.
Claims priority of application No. 10-2020-0050884 (KR), filed on Apr. 27, 2020; and application No. 10-2020-0051422 (KR), filed on Apr. 28, 2020.
Prior Publication US 2023/0223492 A1, Jul. 13, 2023
Int. Cl. H10H 20/819 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/83 (2025.01)
CPC H10H 20/819 (2025.01) [H10H 20/0137 (2025.01); H10H 20/018 (2025.01); H10H 20/825 (2025.01); H10H 20/83 (2025.01); H10H 20/032 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A method for manufacturing a micro-nanofin LED element, comprising the steps of:
(1) preparing an LED wafer in which a first conductive semiconductor layer, a photoactive layer, and a second conductive semiconductor layer are sequentially stacked;
(2) forming an electrode layer or a polarization inducing layer patterned so that regions having different electrical polarities are adjacent to each other on the second conductive semiconductor layer of the LED wafer;
(3) forming a plurality of micro-nanofin LED structures by etching the LED wafer in a thickness direction so that each element has a plane having a length and width of nano or micro size in which a thickness perpendicular to the plane is smaller than the length; and
(4) separating the plurality of micro-nanofin LED structures from the LED wafer.