US 12,439,738 B2
Semiconductor structure and method of manufacturing the same
Kyungwook Hwang, Seoul (KR); Ho Won Jang, Seoul (KR); Junsik Hwang, Hwaseong-si (KR); Jehong Oh, Seoul (KR); Jungel Ryu, Seoul (KR); and Seungmin Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Filed on Nov. 16, 2021, as Appl. No. 17/527,366.
Claims priority of application No. 10-2021-0000544 (KR), filed on Jan. 4, 2021; and application No. 10-2021-0029053 (KR), filed on Mar. 4, 2021.
Prior Publication US 2022/0216368 A1, Jul. 7, 2022
Int. Cl. H01L 33/12 (2010.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H10H 20/01 (2025.01); H10H 20/815 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/815 (2025.01) [C30B 25/04 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); H10H 20/0137 (2025.01); H10H 20/825 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, the method comprising:
forming, on a substrate, a sacrificial layer pattern comprising a plurality of sacrificial layers spaced apart from each other;
forming, on the sacrificial layer pattern, a membrane bridge that covers the plurality of sacrificial layers and comprises an upper surface with a constant height with respect to a surface of the substrate, the upper surface being at the constant height over an entire length of the sacrificial layer pattern comprising the plurality of sacrificial layers;
removing the sacrificial layer pattern from the substrate to form a plurality of cavities defined by the substrate and the membrane bridge;
crystallizing the membrane bridge such that the membrane bridge and the substrate have a same crystallographic direction; and
growing a nitride semiconductor layer on the crystallized membrane bridge wherein the membrane bridge comprises alumina (A2O3).