US 12,439,737 B2
Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
Christoph Eichler, Donaustauf (DE); Lars Nähle, Bad Abbach (DE); and Sven Gerhard, Alteglofsheim (DE)
Assigned to AMS-OSRAM INTERNATIONAL GMBH, Regensburg (DE)
Appl. No. 17/924,288
Filed by ams-OSRAM International GmbH, Regensburg (DE)
PCT Filed May 10, 2021, PCT No. PCT/EP2021/062303
§ 371(c)(1), (2) Date Nov. 9, 2022,
PCT Pub. No. WO2021/228755, PCT Pub. Date Nov. 18, 2021.
Claims priority of application No. 10 2020 205 940.3 (DE), filed on May 12, 2020.
Prior Publication US 2023/0197893 A1, Jun. 22, 2023
Int. Cl. H10H 20/814 (2025.01); H01L 25/075 (2006.01); H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/40 (2006.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/814 (2025.01) [H01L 25/0753 (2013.01); H01S 5/0071 (2013.01); H01S 5/0203 (2013.01); H01S 5/40 (2013.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01); H10H 20/0363 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A radiation emitting semiconductor chip comprising
a semiconductor body comprising an active region configured to generate electromagnetic radiation,
a resonator comprising a first end region and a second end region, and
at least one recess in the semiconductor body, which completely penetrates the active region, wherein
the active region is arranged in the resonator, and
the recess presets a reflectivity for the electromagnetic radiation, and
a highly reflective mirror layer is arranged on the semiconductor body in the second end region, wherein
the recess is arranged in the first end region or the recess is arranged between the first end region and the second end region,
a first contact layer is arranged on the semiconductor body, which is configured to impress a current into the semiconductor body,
a second contact layer is arranged on the semiconductor body,
the first contact layer is spaced apart from the second contact layer in lateral direction, and
the recess is arranged between the first contact layer and the second contact layer.