US 12,439,735 B2
Semiconductor device and method for producing semiconductor device
Koji Okuno, Kiyosu (JP); Koichi Mizutani, Kiyosu (JP); Masaki Oya, Kiyosu (JP); Kazuyoshi Iida, Kiyosu (JP); Satoshi Kamiyama, Nagoya (JP); Tetsuya Takeuchi, Nagoya (JP); Motoaki Iwaya, Nagoya (JP); and Isamu Akasaki, Nagoya (JP)
Assigned to Meijo University, Nagoya (JP)
Filed by TOYODA GOSEI CO., LTD., Kiyosu (JP); and MEIJO UNIVERSITY, Nagoya (JP)
Filed on Jan. 21, 2022, as Appl. No. 17/581,256.
Claims priority of application No. 2021-014671 (JP), filed on Feb. 1, 2021.
Prior Publication US 2022/0246793 A1, Aug. 4, 2022
Int. Cl. H10H 20/813 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01)
CPC H10H 20/813 (2025.01) [H10H 20/01 (2025.01); H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first n-type semiconductor layer;
a tunnel junction layer formed on the first n-type semiconductor layer;
a second p-type semiconductor layer formed on the tunnel junction layer;
a dielectric mask formed on the second p-type semiconductor layer;
a plurality of openings formed on the dielectric mask as holes having a depth reaching the second p-type semiconductor layer; and
a plurality of p-type columnar semiconductor formed on the second p-type semiconductor layer of the openings,
wherein a mesa is further formed, and the tunnel junction layer and the second p-type semiconductor layer are exposed on a side surface of the mesa, further comprising:
a buried layer comprising an n-type semiconductor for filling in a space between the plurality of p-type columnar semiconductors, and
wherein the mesa is a trench for separating elements.