US 12,439,734 B2
Semiconductor device comprising electron blocking layer
Yung-Chung Pan, Hsinchu (TW); Chang-Yu Tsai, Hsinchu (TW); Ching-Chung Hu, Hsinchu (TW); Ming-Pao Chen, Hsinchu (TW); Chi Shen, Hsinchu (TW); and Wei-Chieh Lien, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on May 5, 2023, as Appl. No. 18/144,000.
Application 18/144,000 is a continuation of application No. 17/354,705, filed on Jun. 22, 2021, granted, now 11,688,690.
Application 17/354,705 is a continuation of application No. 15/875,735, filed on Jan. 19, 2018, granted, now 11,056,434, issued on Jul. 6, 2021.
Claims priority of provisional application 62/450,824, filed on Jan. 26, 2017.
Prior Publication US 2023/0275022 A1, Aug. 31, 2023
Int. Cl. H10H 20/812 (2025.01); H01L 21/02 (2006.01); H10D 62/824 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01); H10H 20/824 (2025.01)
CPC H10H 20/812 (2025.01) [H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02579 (2013.01); H10H 20/8162 (2025.01); H10D 62/824 (2025.01); H10H 20/8242 (2025.01); H10H 20/8252 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor structure;
a second semiconductor structure on the first semiconductor structure;
an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises a well layer and a barrier layer, wherein the barrier layer has a band gap;
a first electron blocking region between the second semiconductor structure and the active region, wherein the first electron blocking region layer comprises a band gap which is greater than the band gap of the barrier layer;
a first aluminum-containing layer between the first electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking region;
a confinement layer between the first aluminum-containing layer and the active region; and
a second aluminum-containing layer between the first electron blocking region and the confinement layer, wherein the second aluminum-containing layer comprises a band gap which is greater than the band gap of the barrier layer and the band gap of the first electron blocking region;
wherein a thickness of the first aluminum-containing layer is smaller than a thickness of the confinement layer; and
wherein a thickness of the second aluminum-containing layer is smaller than the thickness of the confinement layer.