US 12,439,728 B2
Solar cell and photovoltaic module
Ding Yu, Haining (CN); Zhao Wang, Haining (CN); Jie Yang, Haining (CN); Wenqi Li, Haining (CN); Jiahao Wu, Haining (CN); Hao Wang, Haining (CN); Jialei Chai, Haining (CN); Xiaowen Zhang, Haining (CN); and Shijie Zhao, Haining (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Haining (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Haining (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed on Oct. 25, 2022, as Appl. No. 17/973,438.
Application 17/973,438 is a continuation of application No. PCT/CN2022/124851, filed on Oct. 12, 2022.
Claims priority of application No. 202210474482.9 (CN), filed on Apr. 29, 2022; and application No. 202221032637.5 (CN), filed on Apr. 29, 2022.
Prior Publication US 2023/0352603 A1, Nov. 2, 2023
Int. Cl. H10F 77/30 (2025.01); H10F 10/14 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01)
CPC H10F 77/311 (2025.01) [H10F 10/146 (2025.01); H10F 71/121 (2025.01); H10F 71/129 (2025.01); H10F 77/211 (2025.01); H10F 77/315 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a crystalline silicon substrate;
a first passivation contact step provided on a surface of the crystalline silicon substrate;
a second passivation contact step provided on a surface of the first passivation contact step away from the crystalline silicon substrate and located corresponding to an electrode;
a first passivation antireflection step provided on the surface of the first passivation contact step away from the crystalline silicon substrate and not in contact with the second passivation contact step;
a second passivation antireflection step provided on a surface of the second passivation contact step away from the first passivation contact step; and
the electrode including a side in direct contact with the first passivation contact step and another side penetrating through the second passivation contact step and the second passivation antireflection step,
wherein the first passivation contact step comprises a first tunnel oxide layer and a first doped polysilicon layer, the first tunnel oxide layer is provided on the surface of the crystalline silicon substrate, and the first doped polysilicon layer is provided on a side of the first tunnel oxide layer away from the crystalline silicon substrate;
the second passivation contact step comprises a second tunnel oxide layer and a second doped polysilicon layer, the second tunnel oxide layer is provided on a side of the first doped polysilicon layer away from the first tunnel oxide layer and located corresponding to the electrode; the second doped polysilicon layer is provided on a side of the second tunnel oxide layer away from the first doped polysilicon layer; and
one side of the electrode is in direct contact with the first doped polysilicon layer.